Session H: Nanotechnology 
Date:   Saturday, September 27, 2003
Time:   9:15 a.m. - 12:30 p.m.
Venue: Kurashiki City Art Museum 3F Conference Room 2
        Session Chair (H1-5): T.Baba, National Metrology Institute of Japan, AIST, Japan
9:15 - 9:45 H-1 Nanotechnology - from Promising to Practical The Role of Standards  (Invited)
Stephen Freiman
        Deputy Director, Materials Science and Engineering Laboratory, NIST, Gaithersburg, MD, US
9:45 - 10:00 H-2 Development of a Method for Mass Distribution Measurement of Particles in the Aerosol Phase
Kensei EHARA and Keiji TAKAHATA
 
        National Institute of Advanced Industrial Science and Technology, Japan
10:00 - 10:15 H-3 Nonequillibrium Formation of Nanoscale Ultra-Shallow Junctions by Coherent Phonon Excitation Process
Y.Setsuhara*, M.Hashida**, M.Fuita**, B.Mizuno***, K.Takahashi*, K.Nogi**** and K.Ono*
        *Graduate School of Engineering, Kyoto University, Kyoto, Japan
**Institute for Laser Technology, Osaka, Japan ***Ultimate Junction Technologies Inc., Osaka, Japan
****Joining and Welding Research Institute, Osaka University, Osaka, Japan
10:15 - 10:30 H-4 Recent Developments in Nanotechnology in Thailand (Invited)
Pairash Thajchayapong and
Wiwut Tanthapanichakoon
        Chulalongkorn University, Thai Powder Technology Center, Thailand
10:30 - 10:45 H-5 The Applications of Nano Materials and Their Future
C. C. Huang
        Hosokawa Nano Particle Technology Center, USA
        Session Chair (H6-9) : S.Freiman, NIST, USA
10:45 - 11:15 H-6 Growth and Characterization of Heteroepitaxial SiC and ZnO Films on Si Substrates Using Various Interface Patterning and Buffer Layers  (Invited)
Byung-Teak Lee, Ju-Hoon Park, Il-Soo Kim, and Sung-Yeon Hwang
        Photonic and Electronic Thin Film Lab., Chonnam National University,Gwangju, 500-757, Republic of Korea
11:15 - 11:30 H-7 Nano-Sized Crystals Grown in Phase Separated Microenvironments
Kimiyasu Sato, Yuji Hotta, Yoshiaki Kinemuchi and Koji Watari
        National Institute of Advanced Industrial Science and Technology (AIST), Japan
11:30 - 11:45 H-8 Ferroelectric Domain Interface in Defect-engineered Oxides with Bismuth Layered Structure
Yuji NOGUCHI *,**, Masatake TAKAHASHI *and Masaru MIYAYAMA *
        * IIS, University of Tokyo, Japan, ** PRESTO, JST, Japan 
11:45 - 12:15 H-9 Nanostructure Design and Manipulation by Electron Beam Energy  (Invited)
Shun-ichiro TANAKA
        Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology, Japan